Datasheet Details
| Part number | 2SA483 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.79 KB |
| Description | PNP Transistor |
| Datasheet | 2SA483-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA483.
| Part number | 2SA483 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.79 KB |
| Description | PNP Transistor |
| Datasheet | 2SA483-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -150 V -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Isc Silicon PNP Power Transistor 2SA483 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2SA483 | PNP Transistor | ETC |
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2SA483 | Silicon Power Transistor | SavantIC |
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