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2SA483 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) Complement to Type 2SC783 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications

Vertical output applications.

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isc Silicon PNP Power Transistor 2SA483 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Complement to Type 2SC783 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -150 V -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.