Inchange Semiconductor 2SA633
POWER TRANSISTOR
DESCRIPTION
●With TO-202 package●High current capability
APPLICATIONS
●Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbolDESCRIPTION
Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -5 -2 -3 -0.6 10 150 -55~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off cu...