Inchange Semiconductor 2SA636A
POWER TRANSISTOR
| Part No. | 2SA636A |
|---|---|
| Datasheet | 2SA636A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●With TO-202 package●Complement to type 2SC1098/1098A
●High breakdown voltage
●High transition frequency
APPLICATIONS
●For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbolDESCRIPTION
Absolute maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SA636 VCEO Collector-emitter voltage 2SA636A VEBO IC ICM IB B CONDITIONS Open emitter VALUE -70 -45 UNIT V Open base -60 Open collector -5 -3 -5 -0.6 TC=25℃ 10 V Emitter-base voltage Collector current Collector current-peak Base current V A A A PT Total power dissipation Ta=25℃ 1.2 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA636 2SA636A MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -...
