Inchange Semiconductor 2SA652
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA652 |
|---|---|
| Datasheet | 2SA652 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)●Contunuous Collector Current IC= -1A
●Power DissipationPC= 15W @TC= 25℃
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifier color TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A PC Collector Power Dissipation@TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA652 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage I...