Low Collector Saturation Voltage-
: VCE(SUS)= -1.0V(Max)@ IC= -2.0A
DC Current Gain
: hFE= 35-320@ IC= -0.5A
Complement to Type 2SC1061
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in low frequency power amp
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isc Silicon PNP Power Transistor
2SA671
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain
: hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
2SA671 Datasheet
