Datasheet Details
| Part number | 2SA671 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.99 KB |
| Description | PNP Transistor |
| Datasheet | 2SA671-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA671.
| Part number | 2SA671 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.99 KB |
| Description | PNP Transistor |
| Datasheet | 2SA671-INCHANGE.pdf |
|
|
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·Low Collector Saturation Voltage- : VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA671 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA671 | POWER TRANSISTORS | Mospec Semiconductor |
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2SA671 | PNP EPITAXIAL SILICON TRANSISTOR | Wing Shing Computer Components |
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