Datasheet Details
| Part number | 2SA680 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | PNP Transistor |
| Datasheet | 2SA680-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA680.
| Part number | 2SA680 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.83 KB |
| Description | PNP Transistor |
| Datasheet | 2SA680-INCHANGE.pdf |
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·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Complement to Type 2SC1080 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -1A VBE(on) Base-Emitter On Voltage IC= -10A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA680 | (2SA679 / 2SA680) Silicon POwer Transistors | SavantIC |
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