Inchange Semiconductor 2SA699A
POWER TRANSISTOR
DESCRIPTION
●With TO-202 package●Complement to type 2SC1226/1226A
APPLICATIONS
●Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbolDESCRIPTION
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SA699 VCBO Collector-base voltage 2SA699A 2SA699 VCEO Collector-emitter voltage 2SA699A VEBO IC ICM IB B CONDITIONS VALUE -40 UNIT Open emitter -50 -32 Open base -40 Open collector -5 -2 -3 -0.6 TC=25℃ 10 150 -55~150 V V Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W ℃ ℃ PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SA699 IC=-1mA;IE=0 2SA699A 2SA699 IC=-10mA; IB=0 2SA699A ICBO ICEO IEBO hFE COB fT Collector cut-off current Coll...