Inchange Semiconductor 2SA700
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SA700 |
|---|---|
| Datasheet | 2SA700 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current -IC= -1.5A●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min)
●Good Linearity of hFE
●Low Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●Designed for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA700 isc website： 1 isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA700ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 VCE(sat) Collector-Emit...