Download 2SA700 Datasheet PDF
Inchange Semiconductor
2SA700
DESCRIPTION - High Collector Current -IC= -1.5A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) - Good Linearity of h FE - Low Saturation Voltage - Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS - Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -35 VEBO Emitter-Base Voltage -5 Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA700 isc website:.iscsemi....