Datasheet Details
| Part number | 2SA700 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.13 KB |
| Description | PNP Transistor |
| Datasheet | 2SA700-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA700 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.13 KB |
| Description | PNP Transistor |
| Datasheet | 2SA700-INCHANGE.pdf |
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·High Collector Current -IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA700 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA700 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
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