Datasheet Details
| Part number | 2SA744 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.21 KB |
| Description | PNP Transistor |
| Datasheet | 2SA744-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA744.
| Part number | 2SA744 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.21 KB |
| Description | PNP Transistor |
| Datasheet | 2SA744-INCHANGE.pdf |
|
|
|
·High Power Dissipation- : PC= 70W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type 2SC1402 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 70 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.3A ICBO Collector Cutoff Current VCB= -80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA744 | (2SA744 / 2SA745) Silicon POwer Transistors | SavantIC |
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