Datasheet Details
| Part number | 2SA746 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.14 KB |
| Description | PNP Transistor |
| Datasheet | 2SA746-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA746.
| Part number | 2SA746 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.14 KB |
| Description | PNP Transistor |
| Datasheet | 2SA746-INCHANGE.pdf |
|
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·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type 2SC1115 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -4 A 100 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA746 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
IB= -0.5A ICBO Collector Cutoff Current VCB= -80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SA746 | PNP Transistor | Panasonic Semiconductor | |
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