2SA795 Description
·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= -1mA.