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2SA795 - Silicon PNP Power Transistor

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Description

Large Collector Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) Good Linearity of hFE Complement to Type 2SC1565 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium Power amplifier ap

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Datasheet Details

Part number 2SA795
Manufacturer INCHANGE
File Size 201.14 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA795 isc website：www.iscsemi.
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