Datasheet Details
| Part number | 2SA808 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.77 KB |
| Description | PNP Transistor |
| Datasheet | 2SA808-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SA808.
| Part number | 2SA808 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.77 KB |
| Description | PNP Transistor |
| Datasheet | 2SA808-INCHANGE.pdf |
|
|
|
·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA808 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;
IB= -0.3A ICBO Collector Cutoff Current VCB= -80V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA808 | Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA877 | PNP Transistor |
| 2SA1002 | Silicon PNP Power Transistor |
| 2SA1006A | PNP Transistor |
| 2SA1006B | PNP Transistor |
| 2SA1009A | PNP Transistor |
| 2SA1010 | PNP Transistor |
| 2SA1012 | TO-252 PNP Transistor |
| 2SA1012-D | PNP Transistor |
| 2SA1013 | PNP Transistor |
| 2SA1046 | PNP Transistor |