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2SA900 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) Good Linearity of hFE Low Collector Saturation Voltage Complement to Type 2SC1568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency pow

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isc Silicon PNP Power Transistor 2SA900 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.