Datasheet Details
| Part number | 2SA900 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.09 KB |
| Description | PNP Transistor |
| Datasheet | 2SA900-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA900.
| Part number | 2SA900 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.09 KB |
| Description | PNP Transistor |
| Datasheet | 2SA900-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA900 | Silicon PNP Transistor | Panasonic Semiconductor |
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2SA900 | Silicon POwer Transistors | SavantIC |
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