Inchange Semiconductor 2SA913A
POWER TRANSISTOR
| Part No. | 2SA913A |
|---|---|
| Datasheet | 2SA913A Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220 package●Complement to type 2SC1913/1913A
●Large collector power dissipation
●High VCEO
APPLICATIONS
●Audio frequency high power driver PINNING PIN 1 2 3DESCRIPTION
Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA913 VCBO Collector-base voltage 2SA913A 2SA913 VCEO Collector-emitter voltage 2SA913A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -180 -5 -1 -1.5 15 150 -55~150 V A A W ℃ ℃ Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SA913 IC=-0.1mA ,IB=0 B 2SA913 2SA913A CONDITIONS MIN -150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -180 2SA913A IE=-10μA ,IC=0 I...
