Inchange Semiconductor 2SA914
POWER TRANSISTOR
| Part No. | 2SA914 |
|---|---|
| Datasheet | 2SA914 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●With TO-126 package●Complement to type 2SC1953
●Good linearity of hFE
●High VCEO
APPLICATIONS
●For audio frequency power pre-amplifier PINNING PIN 1 2 3DESCRIPTION
Emitter Collector;connected to mounting base Base● Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1 150 -55~150 UNIT V V V mA mA W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA914 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1mA;IB=0 IE=-10μA ;IC=0 IC=-30mA ;IB=-3mA -150 V V(BR)EBO VCEsat Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V μA μA ICBO Collec...
