Inchange Semiconductor 2SA963
POWER TRANSISTOR
| Part No. | 2SA963 |
|---|---|
| Datasheet | 2SA963 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
●With TO-126 package●Complement to type 2SC2209
●High collector power dissipation
APPLICATIONS
●For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base BaseDESCRIPTION
● Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -1.5 -3 10 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA963 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0 -40 V V(BR)CBO VCEsat Collector-base breakdown voltage IC=-1mA ;IE=0 IC=-1.5A ;IB=-150mA -50 V Collector-emitter saturation voltage -1.0 V VBEsat Bas...
