Datasheet4U Logo Datasheet4U.com

2SA985 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) Good Linearity of hFE Complement to Type 2SC2275 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA985 Silicon POwer Transistors SavantIC
2SA985A Silicon POwer Transistors SavantIC
2SA985A POWER TRANSISTOR Inchange Semiconductor
2SA980 (2SA980 - 2SA982) Silicon POwer Transistors SavantIC
2SA980 POWER TRANSISTOR Inchange Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA981 PNP Transistor
2SA982 PNP Transistor
2SA900 PNP Transistor
2SA965 PNP Transistor
2SA968 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SA985 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2275 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 1.