Inchange Semiconductor 2SA985A
POWER TRANSISTOR
DESCRIPTION
●With TO-220 package●Complement to type 2SC2275/2275A
●High breakdown voltage
APPLICATIONS
●For low frequency and high frequency power amplifer applicatons PINNING PIN 1 2 3DESCRIPTION
Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SA985 VCBO Collector-base voltage 2SA985A 2SA985 VCEO Collector-emitter voltage 2SA985A VEBO IC ICM IB B CONDITIONS VALUE -120 UNIT Open emitter -150 -120 Open base -150 Open collector -5 -1.5 -3.0 -0.3 Ta=25℃ 1.5 V V Emitter-base voltage Collector current Collector current-peak Base current V A A A PT Total power dissipation TC=25℃ 25 150 -55~150 W Tj Tstg Junction temperature Storage temperature ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA985 2SA985A MIN TYP. MAX UNIT 2SA985 V(BR)CEO Collector-emitter breakdown voltage 2SA985A IC=-...