Inchange Semiconductor 2SAR574D
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SAR574D |
|---|---|
| Datasheet | 2SAR574D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Suitable for middle power drivers●Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA)
●Complementary NPN types:2SCR574D
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low frequency amplifierABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SAR574D isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SAR574DELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BVCBO Collector-Base breakdown voltage IC=-100uA -80 V BVCEO Collector-Emitter breakdown voltage IC=-1mA -80 V BVEBO Emitter-Base breakdown voltage IE=-100uA -6 V VCE(s...