Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V (Min)
Wide Area of Safe Operation
Complement to Type 2SD1563
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency power amplifier applications.
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isc Silicon PNP Power Transistor
2SB1086
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1563 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-3
A
10 W
1.2
150
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SB1086 Datasheet
