2SB1098 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1098 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;.
