Download 2SB1098 Datasheet PDF
Inchange Semiconductor
2SB1098
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) - High DC Current Gain- : h FE=2000(Min)@ (VCE= -2V, IC= -3A) - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Low speed switching industrial - Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -100 -100 -7 -5 -8 -0.5 2 W ℃ -55~150...