Inchange Semiconductor 2SB1098
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1098 |
|---|---|
| Datasheet | 2SB1098 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)●High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Low speed switching industrial●Low frequency power amplifier
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -100 V -100 V -7 V -5 A -8 A -0.5 A 2 W 20 150 ℃ -55~150 ℃ 2SB1098 isc website： isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1098ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakd...