2SB1101
2SB1101 is PNP Transistor manufactured by Inchange Semiconductor.
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
- High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, IC= -2A)
- plement to Type 2SD1601
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifiers...
