2SB1102 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·plement to Type 2SD1602 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.