Datasheet4U Logo Datasheet4U.com

2SB1102 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) Complement to Type 2SD1602 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1102 PNP Transistor Hitachi Semiconductor
2SB1102 SILICON POWER TRANSISTOR SavantIC
2SB1100 Silicon PNP Power Transistors Inchange Semiconductor
2SB1101 PNP Transistor Hitachi Semiconductor
2SB1101 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SB1101 PNP Transistor
2SB1103 PNP Transistor
2SB1105 PNP Transistor
2SB1106 PNP Transistor
2SB1133 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Darlington Power Transistor 2SB1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1602 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.