Datasheet Details
| Part number | 2SB1103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.40 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1103-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1103 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.40 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1103-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1103 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1103 | PNP Transistor | Hitachi Semiconductor |
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2SB1103 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
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| 2SB1134 | PNP Transistor |
| 2SB1135 | PNP Transistor |
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| 2SB1149 | PNP Transistor |