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2SB1151 - TO-126 PNP Transistor

General Description

Large Collector Current Low Collector Saturation Voltage High Power Dissipation Complement to 2SD1691 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

or motor.

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isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to 2SD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -60 V -60 V -7 V -5 A -8 A -1 A 20 W 1.