Datasheet Details
| Part number | 2SB1225 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.32 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1225-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1225 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.32 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1225-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -5A) ·Large Current Capability and Wide ASO.
·Low collector-to-emitter saturation voltage ·Complement to Type 2SD1827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -15 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1225 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1225 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1225 | Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
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2SB1225 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1223 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1230 | PNP Transistor |
| 2SB1231 | PNP Transistor |
| 2SB1236 | Silicon PNP Power Transistor |
| 2SB1253 | PNP Transistor |
| 2SB1254 | PNP Transistor |