Datasheet Details
| Part number | 2SB1315 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1315-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1315 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.25 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1315-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1977 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-55W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 3.5 W 65 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1315 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1315 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
IB= -0.5A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1315 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |
| 2SB1343 | PNP Transistor |
| 2SB1344 | PNP Transistor |
| 2SB1345 | PNP Transistor |
| 2SB1346 | PNP Transistor |