Datasheet Details
| Part number | 2SB1335 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.53 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1335-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SB1335.
| Part number | 2SB1335 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.53 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1335-INCHANGE.pdf |
|
|
|
·High Collector Current:: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1855 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1335 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1334 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |
| 2SB1343 | PNP Transistor |
| 2SB1344 | PNP Transistor |
| 2SB1345 | PNP Transistor |
| 2SB1346 | PNP Transistor |