Datasheet Details
| Part number | 2SB1346 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.38 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1346-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1346 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.38 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1346-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2027 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 2 W 30 150 ℃ Tstg Storage Temperature -40~150 ℃ 2SB1346 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;
| Part Number | Description |
|---|---|
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |
| 2SB1343 | PNP Transistor |
| 2SB1344 | PNP Transistor |
| 2SB1345 | PNP Transistor |
| 2SB1347 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |