2SB1353 Overview
·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·plement to Type 2SD2033 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage driver applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO...
