Good Linearity of hFE
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
Complement to Type 2SD2033
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in high voltage driver applications.
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isc Silicon PNP Power Transistor
DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·Complement to Type 2SD2033 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-1.5
A
1.8 W
20
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1353
isc website：www.iscsemi.
2SB1353 Datasheet
