Datasheet Details
| Part number | 2SB1353 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1353-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1353 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.49 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1353-INCHANGE.pdf |
|
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·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·plement to Type 2SD2033 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.5 A 1.8 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1353 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1353 | PNP Transistor | ROHM |
| Part Number | Description |
|---|---|
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |
| 2SB1343 | PNP Transistor |
| 2SB1344 | PNP Transistor |
| 2SB1345 | PNP Transistor |