2SB1381 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Low Collector Saturation Voltage-.
| Part number | 2SB1381 |
|---|---|
| Datasheet | 2SB1381-INCHANGE.pdf |
| File Size | 210.42 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.5A) ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SB1381 | TRANSISTOR | Toshiba Semiconductor | |
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2SB1381 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
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| 2SB1382 | PNP Transistor |
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| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |