2SB1382 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) Complement to Type 2SD2082 Minimum Lot-to-Lot variations for robust device

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2SB1382 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB1382
Manufacturer	Inchange Semiconductor
File Size	218.89 KB
Description	PNP Transistor
Datasheet	2SB1382 Datasheet

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA) ·Complement to Type 2SD2082 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1382 APPLICATIONS ·Designed for chopper regulator, DC motor driver and general purpose applications.