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2SB1383 - PNP Transistor

General Description

High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) Complement to Type 2SD2083 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of sol

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications.