Datasheet Summary
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain
: hFE= 2000(Min.)@ IC= -12A, VCE= -4V
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min)
- plement to Type 2SD2083
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for driver of solenoid, motor and general purpose...
