Datasheet Details
| Part number | 2SB1390 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.20 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1390-INCHANGE.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1390 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.20 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1390-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1390 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1390 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -25mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SB1390 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB1390 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB139040ML | SCHOTTKY BARRIER DIODE | Silan Microelectronics |
|
2SB139060ML | SCHOTTKY BARRIER DIODE | Silan Microelectronics |
| Part Number | Description |
|---|---|
| 2SB1391 | PNP Transistor |
| 2SB1392 | PNP Transistor |
| 2SB1393 | PNP Transistor |
| 2SB1315 | PNP Transistor |
| 2SB1317 | PNP Transistor |
| 2SB1334 | PNP Transistor |
| 2SB1335 | PNP Transistor |
| 2SB1339 | PNP Transistor |
| 2SB1341 | PNP Transistor |
| 2SB1342 | PNP Transistor |