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2SB1470 - PNP Transistor

General Description

High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification

Optimum for 120W HiFi output applications.

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High forward current transfer ratio hFE ·Low collector to emitter saturation voltage VCE(sat) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification ·Optimum for 120W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -15 A 150 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1470 isc website：www.iscsemi.