High DC Current Gain-
: hFE= 5000(Min)@IC= -4A
Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -4A
Complement to Type 2SD2275
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier applicati
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications ·Optimum for 55W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-8
A
60 W
3.
2SB1502 Datasheet
