Inchange Semiconductor 2SB1559
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1559 |
|---|---|
| Datasheet | 2SB1559 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE= 5000(Min)@IC= -6A●Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -6A
●Complement to Type 2SD2389
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio, series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1559ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA VBE(s...