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2SB1587 - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= -6A, VCE=- 4V) Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA) Complement to Type 2SD2438 Minimum Lot-to-Lot variations for robust device

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Datasheet Details

Part number 2SB1587
Manufacturer INCHANGE
File Size 238.51 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -6A, VCE=- 4V) ·Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA) ·Complement to Type 2SD2438 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.
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