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2SB1624 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A Complement to Type 2SD2493 Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS Designed for audio,series

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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor 2SB1624 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2493 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS ·Designed for audio,series regulator and general purpose applications.