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2SB1626 - PNP Transistor

General Description

High DC Current Gain Low-Collector Saturation Voltage Complement to Type 2SD2495 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1626 DESCRIPTION ·High DC Current Gain ·Low-Collector Saturation Voltage ·Complement to Type 2SD2495 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.