2SB1647 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage-.
2SB1647 is PNP Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Sanken |
2SB1647 | Silicon PNP Transistor |
SavantIC |
2SB1647 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage-.