2SB1647 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) Complement to Type 2SD2560 Minimum Lot-to-Lot variations for robust devi

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Datasheet Details

Part number	2SB1647
Manufacturer	Inchange Semiconductor
File Size	234.78 KB
Description	PNP Transistor
Datasheet	2SB1647 Datasheet

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= -10A, VCE= -4V) ·Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10mA) ·Complement to Type 2SD2560 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.