2SB1647
2SB1647 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
- High DC Current Gain-
: h FE= 5000( Min.) @(IC= -10A, VCE= -4V)
- Low Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ (IC= -10A, IB= -10m A)
- plement to Type 2SD2560
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio, series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-15
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
-1
℃...
