Datasheet Details
| Part number | 2SB1655 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.31 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1655-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1655 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.31 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1655-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -6 A 2 W 25 150 ℃ -55~150 ℃ 2SB1655 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1655 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1655 | PNP Transistor | SavantIC |
| Part Number | Description |
|---|---|
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