Datasheet Details
| Part number | 2SB1657 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.75 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1657-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SB1657 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.75 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1657-INCHANGE.pdf |
|
|
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·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -30 V -30 V -6 V -5 A -8 A -1 A 10 W 1 150 ℃ -55~150 ℃ 2SB1657 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1657 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A;
IB= -25mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1657 | Silicon PNP Transistor | NEC |
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2SB1657 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SB1603 | PNP Transistor |
| 2SB1604 | PNP Transistor |
| 2SB1605 | PNP Transistor |
| 2SB1606 | PNP Transistor |
| 2SB1607 | PNP Transistor |
| 2SB1624 | PNP Transistor |
| 2SB1625 | PNP Transistor |
| 2SB1626 | PNP Transistor |