Datasheet Details
| Part number | 2SB503 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SB503-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2SB503 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.28 KB |
| Description | PNP Transistor |
| Datasheet | 2SB503-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 1.5 W 25 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB503 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SB503 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB503A | SILICON PNP TRANSISTOR | Toshiba |
| Part Number | Description |
|---|---|
| 2SB502 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |
| 2SB508 | PNP Transistor |
| 2SB511 | PNP Transistor |
| 2SB512 | PNP Transistor |
| 2SB513 | PNP Transistor |
| 2SB515 | PNP Transistor |
| 2SB518 | PNP Transistor |
| 2SB519 | PNP Transistor |