2SB507 - PNP Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A Complement to Type 2SD313 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the

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2SB507 pnp transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SB507
Manufacturer	Inchange Semiconductor
File Size	217.02 KB
Description	PNP Transistor
Datasheet	2SB507 Datasheet

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isc Silicon PNP Power Transistor 2SB507 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6.