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2SB507 - PNP Transistor

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Part number 2SB507
Manufacturer INCHANGE
File Size 217.02 KB
Description PNP Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A Complement to Type 2SD313 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO E

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