Download 2SB507 Datasheet PDF
2SB507 page 2
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Datasheet Summary

isc Silicon PNP Power Transistor DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) - Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max) @IC= -2.0A - plement to Type 2SD313 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for the output stage of 15W to 25W AF power...