Datasheet Details
| Part number | 2SB531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.13 KB |
| Description | PNP Transistor |
| Datasheet | 2SB531-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2SB531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.13 KB |
| Description | PNP Transistor |
| Datasheet | 2SB531-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation- : PC= 50W(Max)@TC=25℃ ·Complement to Type 2SD371 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB531 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB531 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB530 | PNP Transistor |
| 2SB532 | PNP Transistor |
| 2SB536 | PNP Transistor |
| 2SB537 | PNP Transistor |
| 2SB538 | PNP Transistor |
| 2SB539 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |