Datasheet Details
| Part number | 2SB536 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SB536-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors 2SB536.
| Part number | 2SB536 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.50 KB |
| Description | PNP Transistor |
| Datasheet | 2SB536-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SD381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching.
·Suitable for driver of 60~100 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current -0.3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB536 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SB536 | SILICON POWER TRANSISTOR | NEC |
| Part Number | Description |
|---|---|
| 2SB530 | PNP Transistor |
| 2SB531 | PNP Transistor |
| 2SB532 | PNP Transistor |
| 2SB537 | PNP Transistor |
| 2SB538 | PNP Transistor |
| 2SB539 | PNP Transistor |
| 2SB502 | PNP Transistor |
| 2SB503 | PNP Transistor |
| 2SB506 | PNP Transistor |
| 2SB507 | PNP Transistor |