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2SB536 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SD381 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Audio frequency power amplifier, low speed switching.

Suitable for driver of 60~100 watts a

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isc Silicon PNP Power Transistors 2SB536 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Complement to Type 2SD381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier, low speed switching. ·Suitable for driver of 60~100 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak -3.0 A IB Base Current -0.3 A Collector Power Dissipation@TC=25℃ 20 PC W Collector Power Dissipation@Ta=25℃ 1.