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2SB546 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD401 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 30 W 150 Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 78 ℃/W Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W 2SB546 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB546 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;

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