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2SB596 - PNP Transistor

General Description

Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Complement to Type 2SD526 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type 2SD526 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 20~25W high-fidelity audio frequency amplifier output stage.