Datasheet Details
| Part number | 2SB600 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.00 KB |
| Description | PNP Transistor |
| Datasheet | 2SB600-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistors.
| Part number | 2SB600 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.00 KB |
| Description | PNP Transistor |
| Datasheet | 2SB600-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 200W(Max)@TC=25℃ ·Complement to Type 2SD555 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -15 A 200 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SB600 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -1A VBE(sat) Base-Emitter Saturation Voltage IC= -10A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB600 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB601 | PNP Transistor |
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| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |
| 2SB613 | PNP Transistor |
| 2SB616 | PNP Transistor |
| 2SB624 | PNP Transistor |
| 2SB625 | PNP Transistor |